The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jul. 15, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H10P 14/6336 (2026.01); H10P 14/69215 (2026.01); H10P 14/69433 (2026.01);
Abstract
An etching method includes (a) providing a substrate. The substrate includes a first region and a second region. The second region contains silicon oxide, and the first region contains a material different from a material for the second region. The etching method further includes (b) forming a deposit preferentially on the first region with first plasma generated from a first process gas containing a carbon monoxide gas. The etching method further includes (c) etching the second region.
Sato, Takuma. (2026). Etching method, plasma processing apparatus, substrate processing system, and program (U.S. Patent No. 12751227). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12751227
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile