The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Aug. 17, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Francois Hebert, San Mateo, CA (US);
James A. Cooper, Santa Fe, NM (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 12/01 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 12/441 (2025.01); H10D 8/00 (2025.01); H10D 12/021 (2025.01); H10D 12/032 (2025.01); H10D 12/416 (2025.01); H10D 12/461 (2025.01); H10D 12/481 (2025.01); H10D 62/8325 (2025.01);
Abstract
Structures for an insulated-gate bipolar transistor and methods of forming a structure for an insulated-gate bipolar transistor. The structure comprises a semiconductor substrate having a front surface and a back surface opposite from the front surface. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate electrode at the front surface of the semiconductor substrate, and a diode at the back surface of the semiconductor substrate.