The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Mar. 31, 2022
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Daniel Peter, Sunnyvale, CA (US);

Samantha Siamhwa Tan, Newark, CA (US);

Jengyi Yu, San Ramon, CA (US);

Da Li, Newark, CA (US);

Meng Xue, San Jose, CA (US);

Wook Choi, San Jose, CA (US);

Ji Yeon Kim, Fremont, CA (US);

Alan J. Jensen, Mountain House, CA (US);

Shahd Hassan Labib, San Jose, CA (US);

Younghee Lee, Pleasanton, CA (US);

Hongxiang Zhao, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); G03F 7/00 (2006.01); G03F 7/36 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); G03F 7/0002 (2013.01); G03F 7/36 (2013.01);
Abstract

Various techniques for controlling metal-containing contamination on a semiconductor substrate are provided herein. Such techniques may involve one or more of a post-development bake treatment, a chemical treatment, a plasma treatment, a light treatment, and a backside and bevel edge clean. The techniques may be combined as desired for a particular application. In many cases, the techniques are used to address metal-containing contamination that is generated during a photoresist development operation.


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