The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

May. 02, 2024
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Veeraraghavan S. Basker, Fremont, CA (US);

Kyoung Ha Kim, Cupertino, CA (US);

Byeong Chan Lee, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10W 20/023 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract

Semiconductor devices and methods of manufacturing the same are described. The method includes combining selective recess of a sacrificial layer and isotropic etching of a silicon layer in order to form a protective cap that will allow the silicon layer of the substrate to be etched without affecting the sacrificial layer.


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Basker, Veeraraghavan. (2026). Isolation module formation for backside power delivery application (U.S. Patent No. 12745615). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12745615

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