Transistor contacts and methods of forming thereof

Abstract

A device includes a first transistor layer comprising a first gate electrode and a second transistor layer comprising a second gate electrode that is stacked with the first transistor layer. n intermetal structure comprising a conductive line is disposed between the first transistor layer and the second transistor layer. A first gate contact extends along a sidewall of the first gate electrode from a top surface of the first gate electrode to the conductive lineG. A second gate contact extends along a sidewall of the second gate electrode from a top surface of the second gate electrode to the conductive line. The first gate electrode is electrically connected to the second gate electrode by the first gate contact, the second gate contact, and the conductive line.