The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jul. 23, 2025
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Mao-Lin Huang, Hsinchu, TW;
Lung-Kun Chu, New Taipei, TW;
Chung-Wei Hsu, Baoshan Township, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Chih-Hao Wang, Baoshan Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first channel region disposed in a first device region over a substrate; a first gate dielectric layer disposed over the first channel region; a second gate dielectric layer disposed over the second channel region; and a gate electrode disposed over the first gate dielectric layer. The first gate dielectric layer includes a first dipole dopant and the second gate dielectric layer includes a second dipole dopant embedded therein. A boundary between the first gate dielectric layer and the second gate dielectric layer contains the first dipole dopant and the second dipole dopant.