The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Dec. 14, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

James P Mazza, Saratoga Springs, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/13 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10W 20/00 (2026.01); H10W 20/43 (2026.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10W 20/089 (2026.01); H10W 20/43 (2026.01);
Abstract

Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a device layer having a first top source/drain (S/D), a second top S/D, a first bottom S/D, and a second bottom S/D. The semiconductor structure may further include a first direct back side contact connected to the first bottom S/D, a second direct back side contact connected to the second bottom S/D, and a double via. The double via may include a first half connecting a front side of the device layer to the first direct back side contact, and a second half connecting the front side to the second direct back side contact. The double via may also include a dividing cut splitting the first half of the double via from the second half of the double via.


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