The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Mar. 07, 2024
Tokyo Electron Limited, Tokyo, JP;
Partha Mukhopadhyay, Oviedo, FL (US);
Henry Jim Fulford, Albany, NY (US);
Mark I. Gardner, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Semiconductor devices and corresponding methods of manufacture are disclosed. The semiconductor device includes a first metal structure extending in a first lateral direction. The semiconductor device includes a first ferroelectric layer surrounding a first portion of the first metal structure. The semiconductor device includes a first channel layer surrounding the first ferroelectric layer. The semiconductor device includes a first gate structure surrounding the first portion of the first metal structure, with the first ferroelectric layer and the first channel layer interposed therebetween. The semiconductor device includes a first gate electrode in electrical contact with the first gate structure. The semiconductor device includes a second gate electrode in electrical contact with a second portion of the first metal structure.