The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 10, 2020
Tekscend Photomask Corp., Tokyo, JP;
Kazuaki Matsui, Tokyo, JP;
Yosuke Kojima, Tokyo, JP;
TEKSCEND PHOTOMASK CORP., Tokyo, JP;
Abstract
There are provided a reflective mask blank, a reflective mask, a reflective mask manufacturing method, and a reflective mask correction technique capable of reducing time required for electron beam correction etching, even when a material used for a thin absorption film has a large extinction coefficient k to an EUV light. A reflective photomask blank () according to this embodiment has a substrate (), a multi-layer reflective film (), a capping layer (), and a low reflective portion (), in which the low reflective portion () is obtained by alternately depositing an absorption film (A) and an absorption film (B), the correction etching rate in the electron beam correction of the absorption film (A) is larger than the correction etching rate in the electron beam correction of the absorption film (B), and the absorption film (B) contains one or more elements selected from tin, indium, platinum, nickel, tellurium, silver, and cobalt.