The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Dec. 15, 2023
Applicant:
Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US);
Inventors:
Cyprian Emeka Uzoh, San Jose, CA (US);
Belgacem Haba, Saratoga, CA (US);
Rajesh Katkar, Milpitas, CA (US);
Oliver Zhao, Daly City, CA (US);
Assignee:
Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/019 (2026.01); H10W 72/01931 (2026.01); H10W 72/01951 (2026.01); H10W 72/01971 (2026.01); H10W 72/0198 (2026.01); H10W 72/953 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/794 (2026.01);
Abstract
A method of bonding substrates comprises depositing a fluorine-doped dielectric layer on a first substrate, exposing the fluorine-doped dielectric layer to a hydrogen-containing plasma, and directly bonding the fluorine-doped dielectric layer to a surface of a second substrate without the use of an intervening adhesive.