The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 05, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Uppili S. Raghunathan, Essex Junction, VT (US);

Alexander M. Derrickson, Saratoga Springs, NY (US);

Sarah A. Mctaggart, Essex Junction, VT (US);

Judson Robert Holt, Ballston Lake, NY (US);

Vibhor Jain, Clifton Park, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 10/01 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 62/184 (2025.01); H10D 10/01 (2025.01); H10D 10/054 (2025.01); H10D 10/061 (2025.01); H10D 62/115 (2025.01); H10D 62/134 (2025.01);
Abstract

The disclosure provides bipolar transistor structures with a cavity below an extrinsic base, and methods to form the same. A structure of the disclosure provides a bipolar transistor structure including an extrinsic base protruding from an intrinsic base of a bipolar transistor. The extrinsic base extends over a cavity. An insulator is horizontally adjacent the cavity and below a portion of the extrinsic base. A collector extension region of the bipolar transistor structure extends laterally below the insulator and the cavity.


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