The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jun. 16, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device (having a VFET architecture) includes: first and second active regions (ARs); first and second metal-to-gate (MG) contacts proximal to channel regions of the first and second ARs; metal-to-source/drain (MD) contacts and buried MD (BMD) contacts correspondingly coupled to first and second S/D regions correspondingly of the first and second ARs; and a metal-to-gate (MP) contact at a same level as the MG contacts, and extending between and coupling together the first and second MG contacts; and relative to a first direction, the first and second ARs being substantially aligned; and at least a portion of the MP contact extending substantially beyond each of the first and second ARs relative to a perpendicular second direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile