The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Feb. 01, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Siva Kumar Chinthu, Bangalore, IN;
Venkatesh P. Gopinath, Fremont, CA (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/63 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2026.01); H10W 10/17 (2026.01); H10W 10/30 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6704 (2025.01); H10D 30/637 (2025.01); H10D 86/01 (2025.01); H10D 86/201 (2025.01); H10W 10/17 (2026.01); H10W 10/30 (2026.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a structure with an isolated well and methods of manufacture. The structure includes: a floating well of a first dopant type within a semiconductor substrate; a second well of a second dopant type within the floating well of the first dopant type; a reverse bias diode at a junction between the floating well and the semiconductor substrate; and a forward bias diode at a junction between the floating well and the second well.