The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 12, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Bencherki Mebarki, Santa Clara, CA (US);
Joung Joo Lee, San Jose, CA (US);
Wenting Hou, San Jose, CA (US);
Takashi Kuratomi, San Jose, CA (US);
Avgerinos V. Gelatos, Scotts Valley, CA (US);
Jianxin Lei, Saratoga, CA (US);
Liqi Wu, San Jose, CA (US);
Raymond Hoiman Hung, Palo Alto, CA (US);
Tae Hong Ha, San Jose, CA (US);
Xianmin Tang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile