The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Sep. 29, 2023
Central Research Institute of Electric Power Industry, Tokyo, JP;
Mirise Technologies Corporation, Nisshin, JP;
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Kiyoshi Betsuyaku, Tokyo, JP;
Norihiro Hoshino, Tokyo, JP;
Isaho Kamata, Tokyo, JP;
Hidekazu Tsuchida, Tokyo, JP;
Akiyoshi Horiai, Nisshin, JP;
Takeshi Okamoto, Nisshin, JP;
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, Tokyo, JP;
MIRISE Technologies Corporation, Nisshin, JP;
DENSO CORPORATION, Kariya-city, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.