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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12735785 B1

PDFFull Text
Date of Patent:
Sep. 15, 2026

Filed:

Dec. 13, 2021

High selectivity, low stress, and low hydrogen carbon hardmasks in low-pressure conditions with wide gap electrode spacing

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Abbin Antony, Beaverton, OR (US);

Xin Meng, Ontario, CA (US);

Xinyi Chen, Beaverton, OR (US);

Sreeram Sonti, San Diego, CA (US);

Kapu Sirish Reddy, Portland, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
C23C 16/22 (2006.01); C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H10P 14/60 (2026.01); H10P 14/68 (2026.01); H10P 14/69 (2026.01); H10P 50/00 (2026.01); H10P 76/00 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
C23C 16/22 (2013.01); C23C 16/26 (2013.01); C23C 16/45512 (2013.01); C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/4583 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01J 37/32715 (2013.01); H10P 14/6334 (2026.01); H10P 14/6336 (2026.01); H10P 14/668 (2026.01); H10P 14/683 (2026.01); H10P 14/6902 (2026.01); H10P 50/692 (2026.01); H10P 76/00 (2026.01); H10P 76/4085 (2026.01); H01J 2237/20235 (2013.01); H01J 2237/3321 (2013.01);
Abstract

Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by providing a wide gap electrode spacing in low-pressure conditions. A wide gap electrode may facilitate control of parasitic plasmas in low-pressure conditions, thereby enabling formation of high selectivity, low stress, and low-hydrogen AHMs. The AHM may then be used to etch features into underlying layers of the substrate.

Find Patent Forward Citations

Antony, Abbin. (2026). High selectivity, low stress, and low hydrogen carbon hardmasks in low-pressure conditions with wide gap electrode spacing (U.S. Patent No. 12735785). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12735785

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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