The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Dec. 13, 2021
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Abbin Antony, Beaverton, OR (US);
Xin Meng, Ontario, CA (US);
Xinyi Chen, Beaverton, OR (US);
Sreeram Sonti, San Diego, CA (US);
Kapu Sirish Reddy, Portland, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/22 (2006.01); C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H10P 14/60 (2026.01); H10P 14/68 (2026.01); H10P 14/69 (2026.01); H10P 50/00 (2026.01); H10P 76/00 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
C23C 16/22 (2013.01); C23C 16/26 (2013.01); C23C 16/45512 (2013.01); C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/4583 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01J 37/32715 (2013.01); H10P 14/6334 (2026.01); H10P 14/6336 (2026.01); H10P 14/668 (2026.01); H10P 14/683 (2026.01); H10P 14/6902 (2026.01); H10P 50/692 (2026.01); H10P 76/00 (2026.01); H10P 76/4085 (2026.01); H01J 2237/20235 (2013.01); H01J 2237/3321 (2013.01);
Abstract
Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by providing a wide gap electrode spacing in low-pressure conditions. A wide gap electrode may facilitate control of parasitic plasmas in low-pressure conditions, thereby enabling formation of high selectivity, low stress, and low-hydrogen AHMs. The AHM may then be used to etch features into underlying layers of the substrate.