The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jun. 08, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jen-Yuan Chang, Hsinchu City, TW;

Fu-Chiang Kuo, Hsinchu City, TW;

Yi-Chu Wu, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 74/01 (2026.01); H10P 72/70 (2026.01); H10W 20/00 (2026.01); H10W 70/60 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 74/10 (2026.01); H10W 70/09 (2026.01); H10W 72/20 (2026.01);
U.S. Cl.
CPC ...
H10W 74/019 (2026.01); H10P 72/74 (2026.01); H10W 20/076 (2026.01); H10W 70/611 (2026.01); H10W 70/614 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 74/016 (2026.01); H10W 74/117 (2026.01); H10P 72/7416 (2026.01); H10W 70/09 (2026.01); H10W 72/241 (2026.01); H10W 74/142 (2026.01);
Abstract

A semiconductor structure includes a wafer circuit structure, at least one first semiconductor die, at least one first supporting structure, and an encapsulant. The at least one first semiconductor die is disposed over and electrically connected to the wafer circuit structure in a device region of the semiconductor structure. The at least one first supporting structure is disposed over the wafer circuit structure in a peripheral region of the semiconductor structure. The encapsulant is disposed over the wafer circuit structure and encapsulates the at least one first semiconductor die and the at least one first supporting structure, where a thickness of the encapsulant at an edge of the semiconductor structure is less than a thickness of the encapsulant within the device region of the semiconductor structure.


Find Patent Forward Citations

Loading…