The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 09, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yin-Jie Pan, New Taipei City, TW;
Yu-Yun Peng, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); H10P 14/68 (2026.01); H10P 14/692 (2026.01); H10P 50/00 (2026.01); H10W 20/00 (2026.01); H10W 20/46 (2026.01); H10W 20/48 (2026.01); H10W 70/698 (2026.01);
U.S. Cl.
CPC ...
H10W 70/698 (2026.01); H10P 14/6334 (2026.01); H10P 14/6538 (2026.01); H10P 14/665 (2026.01); H10P 14/6686 (2026.01); H10P 14/6687 (2026.01); H10P 14/683 (2026.01); H10P 14/6922 (2026.01); H10P 50/73 (2026.01); H10W 20/01 (2026.01); H10W 20/072 (2026.01); H10W 20/075 (2026.01); H10W 20/084 (2026.01); H10W 20/46 (2026.01); H10W 20/48 (2026.01);
Abstract
A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.