The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jul. 26, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Chiang Tsai, Hsinchu City, TW;
Pei-Hsuan Lin, Hsinchu City, TW;
Jeng-Ya Yeh, New Taipei City, TW;
Mu-Chi Chiang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, CN;
Abstract
A semiconductor device includes a source region and a drain region, a first source contact, a first drain contact, a first drain via and a first source via. The source region and the drain region are located over a substrate. The first source contact is disposed on the source region, and the first drain contact is disposed on the drain region. The first drain via is connected to the first drain contact, wherein the first drain via includes a barrier-less body portion. The first source via is connected to the first source contact, wherein the first source via includes a body portion and a barrier layer surrounding the body portion, and a size of the first source via is greater than a size of the first drain via.