The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Dec. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Yen Lin, Hsinchu, TW;
Ching-Yu Huang, Hsinchu, TW;
Wei-Cheng Lin, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes: a first cell region stacked on a second cell region; each including a first active region over a second active region; in a first layer of metallization (M_first layer) over the first active region, M_first power grid (PG) segments having a first reference voltage and M_first routing segments aligned correspondingly to M_first routing tracks; and in a first layer of metallization (BM_first layer) under the second active region, BM_first PG segments having a second reference, and BM_first routing segments aligned correspondingly to BM_first routing tracks. The M_first routing segments are aligned in the first and second cell regions correspondingly to first (Q1) and second (Q2) quantities of the M_first routing tracks, where Q2<Q1. The BM_first routing segments are aligned in the first and second cell regions correspondingly to third and fourth quantities of the BM_first routing tracks, where Q4<Q3.