The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jan. 10, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Kai Tian, Hefei City, CN;

Hongwen Li, Hefei City, CN;

Liang Chen, Hefei City, CN;

Wei Jiang, Hefei City, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 74/00 (2026.01); H10W 70/05 (2026.01); H10W 70/65 (2026.01); H10W 70/652 (2026.01); H10W 70/654 (2026.01); H10W 70/66 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
H10P 74/273 (2026.01); H10W 70/05 (2026.01); H10W 70/65 (2026.01); H10W 70/652 (2026.01); H10W 70/654 (2026.01); H10W 70/66 (2026.01); H10W 72/01935 (2026.01); H10W 72/922 (2026.01); H10W 72/926 (2026.01); H10W 72/932 (2026.01); H10W 72/952 (2026.01); H10W 72/967 (2026.01);
Abstract

A package structure includes an isolation layer with multiple vias, N first pads, N Redistribution Layers (RDLs), and a first insulating layer. Each via exposes a respective part of an interconnection layer arranged on a surface of a semiconductor functional structure. Each first pad is formed by a respective part of the interconnection layer exposed by the corresponding via, N is a positive integer greater than 1. Each RDL covers the isolation layer and is electrically connected to a corresponding one of the N first pads. The first insulating layer is formed on the RDLs and exposes a part area of each RDL. The exposed part areas of at least some of the RDLs includes second pads and third pads. The center point of each second pad has the same offset direction and the same offset distance with respect to the center point of the corresponding first pad.


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