The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Oct. 26, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zeqing Shen, San Jose, CA (US);

Supriya Ghosh, San Jose, CA (US);

Susmit Singha Roy, Campbell, CA (US);

Abhijit B. Mallick, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/694 (2026.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69433 (2026.01); H10P 14/6316 (2026.01); H10P 14/6318 (2026.01); H10P 14/6319 (2026.01); H10P 14/69215 (2026.01);
Abstract

The present disclosure generally relates to methods for forming silicon nitride layers and silicon nitride structures on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber; depositing a first silicon layer on the substrate and the at least one feature; nitriding the first silicon layer to form a first silicon nitride layer on the substrate and the at least one feature; selectively inhibiting silicon nucleation on a portion of the first silicon nitride layer to form an inhibited profile; selectively depositing a second silicon layer on the first silicon nitride layer in accordance with the inhibited profile; and nitriding the second silicon layer to form a second silicon nitride layer disposed directly on the first silicon nitride layer.


Find Patent Forward Citations

Shen, Zeqing. (2026). Sin gap fill via nucleation inhibition (U.S. Patent No. 12733416). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733416

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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