The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jul. 22, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chung-Liang Cheng, Changhua City, TW;
Sheng-Chan Li, Tainan City, TW;
Sheng-Chau Chen, Tainan City, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu-Pei City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/014 (2025.01); H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01);
Abstract
Doping a liner of a trench isolation structure with fluorine reduces dark current from a photodiode. For example, the fluorine may be added to a passivation layer surrounding a backside deep trench isolation structure. As a result, sensitivity of the photodiode is increased. Additionally, breakdown voltage of the photodiode is increased, and a quantity of white pixels in a pixel array including the photodiode are reduced.