The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Aug. 21, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

James P. Mazza, Saratoga Springs, NY (US);

Shahrukh Khan, Sandy Hook, CT (US);

Iqbal Rashid Saraf, Glenmont, NY (US);

Biswanath Senapati, Albany, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 86/01 (2026.01); H10D 86/40 (2025.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 86/0214 (2025.01); H10D 86/441 (2025.01);
Abstract

A semiconductor device includes a first source/drain region, a first contact over the first source/drain region, a second source/drain region, and a lateral contact connecting the second source/drain region to a back end of line (BEOL). Portions of the first contact are recessed, and the lateral contact overlaps with the recessed portions of the first contact. The first source/drain region is formed over the second source/drain region.


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