The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Sep. 09, 2022
Applicant:

Ningbo Semiconductor International Corporation, Ningbo, CN;

Inventors:

Herb He Huang, Ningbo, CN;

Hailong Luo, Ningbo, CN;

Wei Li, Ningbo, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/00 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/173 (2013.01); H03H 3/02 (2013.01); H03H 9/13 (2013.01); H03H 2003/021 (2013.01);
Abstract

The present disclosure provides a film bulk acoustic resonator and a method for fabricating the film bulk acoustic resonator. The resonator includes a carrier substrate; a support layer bonded on the carrier substrate, where the support layer encloses a first cavity exposing the carrier substrate; a piezoelectric stacked structure covering the first cavity, where the piezoelectric stacked structure includes a first electrode, a piezoelectric layer, and a second electrode which are stacked sequentially from a bottom to a top; and protrusions disposed at a boundary of an effective resonance region, where the protrusions are disposed on an upper surface or a lower surface of the piezoelectric stacked structure; or a part of the protrusions is disposed on the upper surface of the piezoelectric stacked structure, and another part of the protrusions is disposed on the lower surface of the piezoelectric stacked structure.


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