The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Nov. 13, 2024
Globalfoundries U.s. Inc., Malta, NY (US);
Siva Kumar Chinthu, Bangalore, IN;
Palle Sundar Veerendranath, Andhra Pradesh, IN;
Rajneesh Kumar, Uttar Pradesh, IN;
Abdul Rajak, Bangalore, IN;
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Disclosed is a charge/discharge circuit structure for an output node (e.g., of a device, such as a charge pump in a memory structure, such as in a resistive random access memory (RRAM) structure). The circuit structure includes, among other components: a positive supply voltage node at a positive supply voltage level; a first input node connected to an output node of a device (e.g., a charge pump) to receive a variable output voltage (Vout); and an N-type field effect transistor (NFET) and a first P-type field effect transistor (PFET) connected in series between the positive supply voltage node and the first input node. The gate of the NFET can be connected to the drain region of the first PFET (and thereby also the first input node). Thus, the NFET functions as a source follower NFET switch controlled by feedback from the drain region of the first PFET.