The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 09, 2023
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Ning Wang, Shanghai, CN;
Kegang Zhang, Shanghai, CN;
Abstract
A split-gate memory array and a method for operating same. The array comprises: a memory array including a plurality of memory cell groups, each memory cell group comprising a first memory cell and a second memory cell, wherein the first memory cell comprises a first storage transistor and a first selection transistor which are formed by means of a split-gate structure, and the second memory cell comprises a second storage transistors and a second selection transistors which are formed by means of a split-gate structure; gate electrodes of the first selection transistors in the same row are connected, gate electrodes of the second selection transistors in the same row are connected, the selection transistors and the storage transistors use a split-gate structure, and the gate electrodes of adjacent selection transistors are connected together to reduce the number of external connection holes, thereby reducing the area of the memory cells.