The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Sep. 20, 2021
Applicant:

Siltronic Ag, Munich, DE;

Inventors:

Thomas Stettner, Waging am See, DE;

Walter Edmaier, Wittibreut, DE;

Assignee:

SILTRONIC AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C30B 25/12 (2006.01); C30B 25/14 (2006.01); C30B 25/16 (2006.01); H10P 14/24 (2026.01); H10P 72/00 (2026.01); H10P 72/76 (2026.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/45502 (2013.01); C23C 16/4583 (2013.01); C23C 16/4584 (2013.01); C30B 25/12 (2013.01); C30B 25/14 (2013.01); C30B 25/16 (2013.01); H10P 14/24 (2026.01); H10P 72/0604 (2026.01); H10P 72/7618 (2026.01);
Abstract

A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section. The substrate is arranged in a deposition apparatus to rest concentrically on a susceptor held by a supporting shaft. The supporting shaft rotates with a time period. Deposition gas is passed over the substrate between a gas inlet and outlet. Flushing gas is passed along a lower side of a preheating ring and of the susceptor. The supporting shaft is displaced with the time period along a displacement path from a position where a thinner edge of the substrate has its smallest distance from the gas inlet, to where the thinner edge has its largest distance therefrom, and back.


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