The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Aug. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Fu-Chiang Kuo, Hsinchu City, TW;

Guan Yu Chen, New Taipei City, TW;

Hsin-Liang Chen, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01); H10W 90/736 (2026.01);
Abstract

The present disclosure describes a structure with a substrate, a circuit element, a first metallization layer, and a second metallization layer. The circuit element is formed on the substrate. The first metallization layer is disposed over the substrate and includes a first metal line electrically connected to the circuit element and first dummy metal lines extending along a first direction. The second metallization layer is disposed directly above the first metallization layer and includes a second metal line electrically connected to the first metal line and second dummy metal lines extending along a second direction. The second direction is perpendicular to the first direction.


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