The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Aug. 02, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Manabu Honma, Iwate, JP;

Junnosuke Taguchi, Iwate, JP;

Yasushi Takeuchi, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 72/76 (2026.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H10P 72/7626 (2026.01); C23C 16/4581 (2013.01); H10P 72/7618 (2026.01); H10P 72/7621 (2026.01);
Abstract

A substrate processing apparatus includes a vacuum chamber, a rotary table in the vacuum chamber, a stage, and a support that supports at least either the rotary table or stage, the support having a thermal expansion coefficient greater than the rotary table or stage that is supported. The rotary table or stage includes a protruding portion protruding toward the support. The support includes a base portion, an insertion portion protruding from a center of the base portion and being inserted into the protruding portion, and an outer edge protruding portion protruding from the base portion. An outer clearance formed between the outer edge protruding portion and the protruding portion is set to be smaller than an inner clearance formed between the insertion portion and the protruding portion at a first temperature, and the outer clearance becomes greater than the inner clearance at a second temperature higher than the first temperature.


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