The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Sep. 20, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Hailong Zhou, San Jose, CA (US);

Iljo Kwak, Santa Clara, CA (US);

Olivier P. Joubert, Meylan, FR;

Yu Wen, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H01J 37/32 (2006.01); H10B 69/00 (2023.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H01J 37/32146 (2013.01); H01J 37/32477 (2013.01); H01J 37/32522 (2013.01); H01J 37/32816 (2013.01); H10B 69/00 (2023.02); H01J 2237/182 (2013.01); H01J 2237/334 (2013.01);
Abstract

Exemplary methods of semiconductor processing may include etching a first portion of a feature in a substrate disposed within a processing region of a semiconductor processing chamber. The first portion of the feature may at least partially extend through one or more layers of material formed on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the carbon-containing precursor. The methods may include forming a carbon-containing material on the substrate. The carbon-containing material may line the first portion of the feature at least partially extending through the one or more layers of material formed on the substrate. The carbon-containing material may be formed in the same chamber where the feature is etched.


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