The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Sep. 06, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jae Young Lee, Bedford, MA (US);

Johannes M. Van Meer, Middleton, MA (US);

Yan Zhang, Westford, MA (US);

Naushad K. Variam, Marblehead, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/6729 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/85 (2025.01); H10W 20/20 (2026.01);
Abstract

Disclosed herein are methods for direct backside contact formation. In some embodiments, a method may include providing a stack of layers defining a front side and a backside, wherein the front side comprises one or more devices, and forming a plurality of vias in the backside, wherein each via of the plurality of vias extends to a source/drain. The method may further include performing a dopant implant to the backside including into the plurality of vias, wherein the dopant implant is performed at a temperature greater than 300° C., forming a silicide region within each of the source/drains, and forming a backside contact within each of the plurality of vias, wherein the backside contact is formed over the silicide region.


Find Patent Forward Citations

Lee, Jae. (2026). Contact resistance reduction for direct backside contact (U.S. Patent No. 12727235). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12727235

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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