The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 09, 2023
Nanjing University, Nanjing, CN;
Xinran Wang, Nanjing, CN;
Dongxu Fan, Nanjing, CN;
Weisheng Li, Nanjing, CN;
Hao Qiu, Nanjing, CN;
Yi Shi, Nanjing, CN;
NANJING UNIVERSITY, Nanjing, CN;
Abstract
A structure of a two-dimensional material-based device having an air-gap and a method for preparing same comprises a substrate, a gate, an dielectric, a two-dimensional material-based film, and source and drain electrodes; the air-gap is formed between the two-dimensional material-based film and the side wall of the dielectric on the gate, or the air-gap is formed between the dielectric and the gate; two-dimensional material-based devices of the above structure utilize the ductility and flexibility of two-dimensional materials to reduce the coupling between the gate and the source/drain electrodes, thereby reducing the parasitic capacitance and the circuit delay; also, the structure ensures that a part of the contact region of the source and drain electrodes with the two-dimensional material can be controlled by the gate, and can thus avoid the reduction in electrical properties and keep a low resistance of the device.