The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Sep. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Marcus Johannes Henricus Van Dal, Linden, BE;

Gerben Doornbos, Kessel-Lo, BE;

Georgios Vellianitis, Heverlee, BE;

Mauricio Manfrini, Zhubei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10P 14/20 (2026.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6713 (2025.01); H10B 61/22 (2023.02); H10B 63/30 (2023.02); H10D 30/6755 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10P 14/3434 (2026.01); H10P 30/202 (2026.01);
Abstract

Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a bottom electrode layer over a substrate and forming a gate dielectric layer over the bottom electrode layer. The method for manufacturing the semiconductor structure also includes forming an active layer over the gate dielectric layer and forming an indium-containing feature vertically overlapping the bottom electrode layer. The method for manufacturing the semiconductor structure also includes forming a source/drain contact landing on the indium-containing feature.


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