Semiconductor process device including electromagnet for controlling plasma

Abstract

According to embodiments of the present inventive concept, a semiconductor process device includes: a chamber; a gas supplier supplying a reactant gas into the chamber; a first plasma electrode disposed in the chamber; a second plasma electrode disposed in the chamber; a plurality of electromagnets configured to generate a plurality of magnetic field components, respectively, to control a density of a plasma region that is formed between the first and second plasma electrodes; and a current supplier configured to supply a plurality of currents to the plurality of electromagnets, respectively, wherein among the plurality of electromagnets, a first electromagnet is disposed closest to the plasma region, wherein a center region of the plasma region is affected by the first electromagnet and has a first diameter, and wherein the first electromagnet has a second diameter less than or equal to the first diameter.