The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Sep. 01, 2023
Applicant:
Stats Chippac Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
STATS ChipPAC Pte. Ltd., Singapore, SG;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 70/652 (2026.01); H10W 72/00 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 70/6528 (2026.01); H10W 72/0198 (2026.01); H10W 74/019 (2026.01); H10W 74/141 (2026.01); H10W 74/142 (2026.01);
Abstract
A semiconductor device has a carrier. An electrical component is disposed over the carrier. An encapsulant is deposited over the electrical component. A conductive layer is formed over the encapsulant. The conductive layer is deposited as a plurality of graphene-coated metal balls in a matrix. The conductive layer is sintered by intensive pulsed light (IPL) irradiation.
Shin, Yongmoo. (2026). Semiconductor device and method of making face-up wafer-level package using intensive pulsed light irradiation (U.S. Patent No. 12721185). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12721185
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile