The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Feb. 29, 2024
Qualcomm Incorporated, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Abhishek Jain, San Diego, CA (US);
Giridhar Nallapati, San Diego, CA (US);
QUALCOMM Incorproated, San Diego, CA (US);
Abstract
Aspects disclosed herein include a die interconnect structure with embedded inductor(s) including coupled coils formed in redistribution layer (RDL) and adjacent bump-level distribution layer (BDL) for improved Q factor. The die interconnect structure includes a metal pad and a first coil formed in the RDL. The die interconnect structure also includes the BDL which includes a secondary metal pad and a second coil. The die interconnect structure also includes a seed layer between the first coil and the second coil. The die interconnect structure includes an inductor comprising the first coil, the second coil, and a via coupling the first and second coils. In this manner, the additional second coil formed in the BDL has higher conductance, less resistance than a coil formed in metallization layers within the die and, thus, advantageously improving the Q factor of the inductor.