The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

May. 26, 2023
Applicants:

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Bingquan Wang, Beijing, CN;

Siriguleng Zhang, Beijing, CN;

Dayong Yan, Beijing, CN;

Zhigao Wang, Beijing, CN;

Daming Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01); H10W 20/42 (2026.01); H10W 42/60 (2026.01); H10W 80/00 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 10/17 (2026.01); H10W 10/0143 (2026.01); H10W 20/42 (2026.01); H10W 42/60 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01);
Abstract

The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a pad groove and a pad structure in the pad groove are formed in the first substrate and the first dielectric layer, and the pad groove extends through the first substrate along a direction from the first substrate to the first dielectric layer and extends into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the pad groove and extending through the first substrate along the direction from the first substrate to the first dielectric layer.


Find Patent Forward Citations

Wang, Bingquan. (2026). Semiconductor structure and method for forming same (U.S. Patent No. 12721118). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12721118

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…