The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Nov. 26, 2024
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Yi Lin Tsai, Tainan City, TW;

Chih-Hsien Tang, Taipei City, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 59/02 (2006.01); G03F 7/00 (2006.01); H10P 50/00 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H10P 50/695 (2026.01); B29C 59/022 (2013.01); B29C 59/026 (2013.01); G03F 7/0002 (2013.01); G03F 7/0035 (2013.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01); H10P 76/204 (2026.01);
Abstract

A patterning method including the following steps is provided. A first template including at least one first main pattern, first dummy patterns, and second main patterns is provided. The first dummy patterns are located aside the first main pattern. A density of the first main pattern is less than a density of the second main patterns. A first imprint material is provided on a first substrate. The first imprint material is imprinted by using the first template to form a first imprint layer. The first substrate is etched by using the first imprint layer as a mask to form a second template. A second imprint material is provided on a material layer. The second imprint material is imprinted by using the second template to form a second imprint layer. The material layer is etched by using the second imprint layer as a mask to form a patterned material layer.


Find Patent Forward Citations

Loading…