The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Sep. 14, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Makoto Wada, Nirasaki City, JP;

Takashi Matsumoto, Nirasaki City, JP;

Ryota Ifuku, Nirasaki City, JP;

Hiroki Yamada, Nirasaki City, JP;

Haruhiko Furuya, Nirasaki City, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); C01B 32/182 (2017.01); C01B 32/186 (2017.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/56 (2006.01); H01L 21/3213 (2006.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 14/40 (2026.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 50/26 (2026.01); H10P 72/00 (2026.01); H10P 72/30 (2026.01); H10P 95/00 (2026.01); H10P 14/69 (2026.01);
U.S. Cl.
CPC ...
H10P 14/416 (2026.01); C01B 32/182 (2017.08); C01B 32/186 (2017.08); C23C 16/0272 (2013.01); C23C 16/26 (2013.01); C23C 16/56 (2013.01); H10P 14/24 (2026.01); H10P 14/3406 (2026.01); H10P 14/6309 (2026.01); H10P 14/6319 (2026.01); H10P 14/6336 (2026.01); H10P 14/6506 (2026.01); H10P 14/6519 (2026.01); H10P 14/69215 (2026.01); H10P 50/267 (2026.01); H10P 72/0418 (2026.01); H10P 72/0436 (2026.01); H10P 72/33 (2026.01); H10P 95/00 (2026.01); H10P 14/6502 (2026.01); H10P 14/6902 (2026.01);
Abstract

A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.


Find Patent Forward Citations

Loading…