The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jun. 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng Ying Ho, Minxiong Township, TW;
Wen-De Wang, Minsyong Township, TW;
Kai-Chun Hsu, Yonghe City, TW;
Yuh Ruey Huang, Hsinchu County, TW;
Chih-Lung Cheng, Tainan City, TW;
Jen-Cheng Liu, Hsin-Chu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A process used to form a first deep trench isolation (DTI) structure in a pixel region of a semiconductor substrate is also used to form a second DTI structure in a guard ring area that isolates the pixel region from a peripheral region. The guard ring area may have a PNP guard ring structure. The second DTI structure may include trenches in each of an inner ring, a middle, and an outer ring of the PNP guard ring structure. The first and second DTI structures may have conductive cores. The conductive cores of the inner and outer ring may be biased to a first voltage while the conductive cores of the middle ring may be biased to an opposite polarity second voltage. When the second DTI structure have conductive cores with these biases, the second DTI structure may be used as the guard ring without the PNP structure.