The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jan. 05, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, a channel structure, a gate structure, two gate spacers and an insulating feature. The gate structure is disposed on the channel structure, and includes an upper gate portion which is located at a level higher than that of an uppermost surface of the channel structure. The two gate spacers are respectively located at two opposite sides of the upper gate portion, and each of the gate spacers has an upward surface having a concave profile. The insulating feature is disposed over the upper gate portion and against the concave profiles of the gate spacers to have an inverted U-shaped profile. The insulating feature includes a cap portion which is disposed on an upper surface of the upper gate portion and extends beyond an edge of the upper surface of the upper gate portion. Methods for manufacturing the semiconductor structure are also disclosed.