The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jul. 27, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Yan Zhang, Westford, MA (US);
Taegon Kim, Gloucester, MA (US);
Johannes M. Van Meer, Middleton, MA (US);
Vikram M. Bhosle, North Reading, MA (US);
Jae Young Lee, Bedford, MA (US);
Naushad K. Variam, Marblehead, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Approaches herein provide devices and methods for forming gate-all-around transistors with improved gate spacer k-values. One method may include forming a gate-all-around (GAA) stack including a plurality of alternating first layers and second layers, and forming a source/drain (S/D) cavity through the plurality of alternating first layers and second layers. The method may further include forming an inner spacer in the S/D cavity, adjacent the plurality of alternating first layers and second layers, performing a first implant by directing fluorine ions to the GAA stack, through the S/D cavity, wherein the first implant is performed at a temperature greater than 30° Celsius and forming a S/D material in the S/D cavity following the first implant.