The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jun. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Georgios Vellianitis, Heverlee, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10B 53/30 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10D 30/0415 (2025.01); H10D 30/701 (2025.01); H10D 64/017 (2025.01); H10W 20/435 (2026.01);
Abstract
A ferroelectric device and methods of forming the same are described. In some embodiments, the method includes depositing a doped hafnium dioxide layer on a layer, and the doped hafnium dioxide layer has a first oxygen vacancy concentration. The method further includes performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration and performing an oxygen anneal process on the doped hafnium dioxide layer to decrease the second oxygen vacancy concentration.