The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Dec. 23, 2022
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Naruhiro Hoshino, Niigata, JP;

Shigetoshi Yamagishi, Niigata, JP;

Atsushi Yoshida, Niigata, JP;

Masahiko Ishida, Niigata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C01B 33/03 (2006.01); C30B 25/02 (2006.01); C30B 29/06 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 33/39 (2024.05); C01B 33/03 (2013.01); C23C 16/24 (2013.01); C30B 25/02 (2013.01); C30B 29/06 (2013.01);
Abstract

A quality evaluation method has a step of producing a silicon for evaluation in which a single crystal silicon is grown to extend radially from a core wirewhile polycrystalline silicon is grown in a reactor; and a step of performing an evaluation using the single crystal silicon.


Find Patent Forward Citations

Hoshino, Naruhiro. (2026). Quality evaluation method, manufacturing system of silicon for evaluation, manufacturing method of silicon for evaluation, and silicon for evaluation (U.S. Patent No. 12716884). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12716884

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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