Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystal

Abstract

Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth. The area of regions Tto T, where regions Rto Rof a basal plane whose shear stresses exceed critical resolved shear stress, and regions Sto Sof a prismatic plane whose shear stresses exceed critical resolved shear stress overlap, is less than a half of the area of a crystal growth surface. Furthermore, the area of the regions Tto Tis smaller than the area of regions Vto Vwhere a region Rof the basal plane whose shear stress does not exceed the critical resolved shear stress overlaps the regions Sto S