The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Aug. 25, 2025
Applicant:

Invention and Collaboration Laboratory, Inc., Taipei City, TW;

Inventors:

Chao-Chun Lu, Hsinchu, TW;

Wen-Hsien Tu, Hsinchu, TW;

Feng-Wu Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 40/25 (2026.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10B 12/00 (2023.01); H10D 30/00 (2025.01); H10D 30/63 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10W 40/253 (2026.01); H10D 30/601 (2025.01); H10D 30/62 (2025.01); H10D 62/115 (2025.01); H10D 64/021 (2025.01); H10D 84/0147 (2025.01); H10D 84/0184 (2025.01); H10W 40/259 (2026.01); H10B 12/05 (2023.02); H10B 12/30 (2023.02); H10B 12/50 (2023.02); H10D 30/503 (2025.01); H10D 30/6211 (2025.01); H10D 30/6212 (2025.01); H10D 30/63 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor circuit structure includes a semiconductor substrate with an original semiconductor surface, an active region within the semiconductor substrate, and a transistor formed based on the active region. The transistor includes a gate structure, a first spacer neighboring to a first sidewall of the gate structure, and a second spacer neighboring to a second sidewall of the gate structure. Wherein a thermal conductivity of the first spacer or the second spacer includes is higher than the thermal conductivity of silicon nitride (SiN).


Find Patent Forward Citations

Lu, Chao-Chun. (2026). Heat removing layer surrounding a transistor (U.S. Patent No. 12707968). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707968

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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