The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Feb. 28, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Te-Chih Hsiung, Taipei City, TW;
Jyun-De Wu, New Taipei City, TW;
Yi-Chen Wang, Zhubei City, TW;
Yi-Chun Chang, Hsinchu, TW;
Yuan-Tien Tu, Puzih City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.