The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Dec. 28, 2023
International Business Machines Corporation, Armonk, NY (US);
Shay Reboh, Guilderland, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Junli Wang, Slingerlands, NY (US);
Tenko Yamashita, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices includes a bottom field effect transistor (FET) over a substrate, having a bottom channel and bottom source/drain structures. A bottom plug of dielectric material penetrates the substrate and that makes contact with a channel of the bottom FET. A top FET over the bottom FET has a top channel that is laterally offset with respect to the bottom channel. Electrical contacts reach to the top FET and the bottom FET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile