The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Dec. 17, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

PO-Sheng Wang, Hsinchu, TW;

Yangsyu Lin, New Taipei City, TW;

Cheng Hung Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); G11C 11/412 (2013.01); G11C 11/419 (2013.01); H10B 10/18 (2023.02);
Abstract

The present disclosure describes embodiments of a memory device with a pre-charge circuit. The memory device can include a memory cell, and the pre-charge circuit can include a first transistor and a second transistor. The first transistor includes a first gate terminal, a first source/drain (S/D) terminal coupled to a reference voltage, and a second S/D terminal coupled to a first terminal of the memory cell. The second transistor includes a second gate terminal, a third S/D terminal coupled to the reference voltage, and a fourth S/D terminal coupled to the second terminal of the memory cell. The first and second transistors are configured to pass the reference voltage in response to the control signal being applied to the first and second gate terminals, respectively.


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